Part Number Hot Search : 
A2717 MPM3530 200129FS C0402 TC648EPA 9923AB 92001 16083N9K
Product Description
Full Text Search
 

To Download 2SD1664PT Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT NPN Switching Transistor
VOLTAGE 32 Volts
APPLICATION
* Telephone and proferssional communction equipment. * Other switching applications.
2SD1664PT
CURRENT 1 Ampere
FEATURE
* Suitable for high packing density. * Low voltage (Max.=32V) . * High saturation current capability. * Voltage controlled small signal switch.
SC-62/SOT-89
4.6MAX. 1.7MAX.
1.6MAX. 0.4+0.05
CONSTRUCTION
* NPN Switching Transistor
2.5+0.1 +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1
* HFE(R):DAP * HFE(P):P64 * HFE(Q):Q64
1 1 Base
2
3
CIRCUIT
2 Collector ( Heat Sink ) 3 Emitter
0.8MIN.
MARKING
4.6MAX.
1 B
2 C
3 E
Dimensions in millimeters
SC-62/SOT-89
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Transistor mounted on an FR4 printed-circuit board.
2004-9
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC total power dissipation storage temperature junction temperature
CONDITIONS open emitter open base open collector - - - - Tamb 25 C; note 1 -
MIN.
MAX. 40 32 5 1 2000 +150 150 V V V A
UNIT
mW C C
-55 -
RATING CHARACTERISTIC CURVES ( 2SD1664PT )
CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL BVCBO BVCEO BV EBO ICBO IEBO hFE VCEsat Cc fT PARAMETER CONDITIONS 40 32 5 - - 82 - - - MIN. - - - 500 500 390 400 15 Typ. 150 Typ. mV pF MHz MAX. V V V nA nA UNIT
collector-base breakdown voltage IE = 0; IC = 50 uA collector-emitter breakdown voltage IB = 0; IC = 1 mA emitter-base breakdown voltage collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage collector capacitance transition frequency IC = 0; IE = 50 uA IE = 0; VCB = 20 V IC = 0; VEB = 4 V VCE = 3V; note 1 IC = 100 mA IC = 0 mA, IB=50 mA -500 IE = ie = 0; VCB =10 V ; f = 1 MHz IC = -50 mA; VCE = 5 V ; f = 100 MHz
Note 1. Pulse test: tp 300 s; 0.02. 2. hFE: R Grade: 82~180 P Grade: 120~270 Q Grade: 180~390
RATING CHARACTERISTIC CURVES ( 2SD1664PT )
Typical Electrical Characteristics
RATING CHARACTERISTIC CURVES ( 2SD1664PT )


▲Up To Search▲   

 
Price & Availability of 2SD1664PT

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X